2SD2583 Datasheet_PDF文件下载_芯片资料查询

DATA SHEET

SILICON TRANSISTOR

2SD2583

AUDIO FREQUENCY AMPLIFIER, SWITCHING

NOPN SILICON EPITAXIAL TRANSISTORS

FEATURES

鈥?/div>

Low V

CE(sat)

V

CE(sat)

= 0.15 V Max (@l

C

/l

B

= 1.0 A/50 mA)

鈥?/div>

High DC Current Gain

h

EF

= 150 to 600 (@V

CE

= 2.0 V, l

C

= 1.0 A)

PACKAGE DIMENSIONS

in millimeters (inches)

8.5 MAX.

2.8 MAX.

(0.334 MAX.)

(0.110 MAX.)

蠁

3.2 卤 0.2 (

蠁

0.126)

12.0 MAX.

(0.472 MAX.)

Maximum Voltage and Current (T

A

= 25

掳C)

Collector to Base Voltage

Collector to Emitter Volteage

Emitter to Base Voltage

Collector Current (DC)

Collector Current (Pulse)*

Base Current (DC)

* PW

鈮?/div>

10ms, Duty Cycle

鈮?/div>

10 %

Maximum Power Dissipation

Total Power Dissipation (T

C

= 25

掳C)

Total Power Dissipation (T

A

= 25

掳C)

Maximum Temperature

Junction Temperature

Storage Temperature

P

T

P

T

j

T

stg

10 W

1.0 W

150

掳C

鈭?5

to 150

掳C

V

CB0

V

CE0

V

EB0

I

C(DC)

I

C(Pulse)

I

B(DC)

30 V

6.0 V

5.0 A

10 A

2.0A

1 2 3

2.5 卤 0.2

(0.098)

13.0 MIN.

(0.512 MIN.)

1.2

(0.047)

0.55

+0.08

鈭?.05

(0.021)

0.8

+0.08

鈭?.05

(0.031)

2.3 2.3

(0.090) (0.090)

1.2

(0.047)

1. Emitter

2. Collector connected to mounting plane

3. Base

ELECTRICAL CHARACTERISTICS (T

A

= 25

掳C)

CHARACTERISTICS

Collector Cutoff Currnet

Emitter Cutoff Current

DC Current Gain

Collector Saturation Voltage

Base Saturation Voltage

Gain Bandwidth Product

Output Capacitance

SYMBOL

I

CB0

I

EB0

h

FE1

h

FE2

V

CE(sat)1

V

CE(sat)2

V

CE(sat)3

V

BE(sat)

f

T

C

ob

TEST CONDITIONS

V

CB

= 30 V, I

E

= 0

V

EB

= 6.0 V, I

C

= 0

V

CE

= 2.0 V, I

C

= 1.0 A

V

CE

= 2.0 V, I

C

= 4.0 A

I

C

= 1.0 A, I

B

= 50 mA

I

C

= 2.0 A, I

B

= 0.1 A

I

C

= 4.0 A, I

B

= 0.2 A

I

C

= 2.0 A, I

B

= 0.1 A

V

CE

= 10 V, I

E

= 50 mA

V

CB

= 10 V, I

E

= 0, f = 1 MHz

150

50

0.07

0.13

0.24

0.86

120

77

0.15

0.25

0.50

1.50

MIN.

TYP.

MAX.

100

600

UNIT

nA

鈭?/div>

V

MHz

pF

The information in this document is subject to change without notice.

Document No. D10628EJ1V0DS00 (1st edition)

Date Published June 1996 P

Printed in Japan

漏

蠁

3.2 卤 0.2

(

蠁

0.126)

ABSOLUTE MAXIMUM RATINGS

3.8 卤 0.2 (0.149)

1996

型号

版本

描述

厂商

下载
2SD200

英文版

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZ...

WINGS

2SD200
2SD200

英文版

Silicon NPN Power Transistors

ISC [Incha...

2SD200
2SD200

英文版

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZ...

WINGS [Win...

2SD200
2SD201

英文版

Silicon NPN Power Transistors

SAVANTIC [Savan...

2SD201
2SD211

英文版

Silicon NPN Power Transistors

ISC [Incha...

2SD211
2SD217

英文版

NPN SILICON EPITAXIAL MESA TRANSISTOR

ETC

2SD217
2SD217

英文版

NPN SILICON EPITAXIAL MESA TRANSISTOR

ETC [ETC]

2SD217
2SD218

英文版

NPN SILICON EPITAXIAL MESA TRANSISTOR

ETC

2SD218
2SD218

英文版

NPN SILICON EPITAXIAL MESA TRANSISTOR

ETC [ETC]

2SD218
2SD219

英文版

NPN Transistor

ETC [ETC]

2SD219
2SD220

英文版

NPN Transistor

ETC [ETC]

2SD220
2SD221

英文版

NPN Transistor

ETC [ETC]

2SD221
2SD227

英文版

Medium Power Amplifiers and Switches

ETC

2SD227
2SD227

英文版

Medium Power Amplifiers and Switches

ETC [ETC]

2SD227
2SD234

英文版

Silicon NPN Power Transistors

ISC [Incha...

2SD234
2sd234

英文版

TRANSISTOR,BJT,NPN,50V V(BR)CEO,3A I(C),TO-220

2sd234
2SD235

英文版

NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFI...

WINGS

2SD235
2SD235

英文版

Silicon NPN Power Transistors

ISC [Incha...

2SD235
2SD256

英文版

ETC [NPN Transistor]

ETC

2SD256
2SD257

英文版

NPN Transistor

ETC [ETC]

2SD257

2SD2583 Datasheet

PDF预览

2SD2583相关型号PDF文件下载

您可能感兴趣的PDF文件资料

热门IC型号推荐

2SD2583 Datasheet

PDF预览

2SD2583相关型号PDF文件下载

您可能感兴趣的PDF文件资料

热门IC型号推荐

建议反馈

PDF纠错X