Transistor
2SD602, 2SD602A
Silicon NPN epitaxial planer type
For general amplification
Complementary to 2SB710 and 2SB710A
Unit: mm
s
Features
q
q
2.8
鈥?.3
0.65卤0.15
+0.2
2.9
鈥?.05
1.9卤0.2
+0.2
Low collector to emitter saturation voltage V
CE(sat)
.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
(Ta=25藲C)
1.5
鈥?.05
+0.25
0.65卤0.15
0.95
1
0.95
3
0.4
鈥?.05
+0.1
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD602
2SD602A
2SD602
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
V
CBO
Symbol
2
60
25
50
5
1
500
200
150
鈥?5 ~ +150
V
emitter voltage 2SD602A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
V
A
mA
mW
藲C
藲C
1:Base
2:Emitter
3:Collector
JEDEC:TO鈥?36
EIAJ:SC鈥?9
Mini Type Package
Marking symbol :
W
(2SD602)
X
(2SD602A)
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
2SD602
2SD602A
2SD602
2SD602A
(Ta=25藲C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10碌A, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 10碌A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
*2
V
CE
= 10V, I
C
= 500mA
*2
I
C
= 300mA, I
B
= 30mA
*2
V
CB
= 10V, I
E
= 鈥?0mA
*2
, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
30
60
25
50
5
85
40
0.35
200
6
*2
min
typ
0 to 0.1
0.1 to 0.3
0.4卤0.2
0.8
30
+0.2
1.1
鈥?.1
max
0.1
0.16
鈥?.06
Ratings
Unit
+0.1
1.45
Unit
碌A
V
V
V
160
340
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
h
FE1
Rank classification
0.6
V
MHz
15
pF
Pulse measurement
Rank
h
FE1
Marking
Symbol
2SD602
2SD602A
Q
85 ~ 170
WQ
XQ
R
120 ~ 240
WR
XR
S
170 ~ 340
WS
XS
1
1
2
