2SJ669 Datasheet

  • 2SJ669

  • Silicon P-Channel MOS Type Relay Drive, DC/DC Converter and ...

  • 210.01KB

  • 6页

  • TOSHIBA

扫码查看芯片数据手册

上传产品规格书

PDF预览

2SJ669
TOSHIBA Field Effect Transistor
Silicon P-Channel MOS Type (U鈭扢OS III)
2SJ669
Relay Drive, DC/DC Converter and Motor Drive
Applications
4-V gate drive
Low drain-source ON-resistance: R
DS (ON)
= 0.12
鈩?/div>
(typ.)
High forward transfer admittance: |Y
fs
| = 5.0 S (typ.)
Low leakage current: I
DSS
=
鈭?00 渭A
(max) (V
DS
=
鈭?0
V)
Enhancement mode: V
th
=
鈭?.8
to
鈭?.0
V
(V
DS
=
鈭?0
V, I
D
=
鈭?
mA)
Unit: mm
Absolute Maximum Ratings
(Ta = 25掳C)
Characteristic
Drain鈭抯ource voltage
Drain鈭抔ate voltage (R
GS
= 20 k鈩?
Gate鈭抯ource voltage
Drain current
Drain power dissipation
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
鈭?0
鈭?0
卤20
鈭?
鈭?0
1.2
40.5
鈭?
0.12
150
鈭?5~150
Unit
V
V
V
A
A
W
mJ
A
mJ
掳C
掳C
Pulse (Note 1)
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-8M1B
Weight: 0.54 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (鈥淗andling Precautions鈥?Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Thermal resistance, channel to
ambient
Symbol
R
th (ch鈭抋)
Max
104
Unit
掳C / W
Note 1: The channel temperature should not exceed 150鈩?during use.
Note 2: V
DD
=
鈭?5
V, T
ch
= 25掳C (initial), L = 2.2 mH, R
G
= 25
鈩?
I
AR
=
鈭?
A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2006-11-17

2SJ669相关型号PDF文件下载

  • 型号
    版本
    描述
    厂商
    下载
  • 英文版
    SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
    NEC
  • 英文版
    MOS Field Effect Transistor
    KEXIN [Gua...
  • 英文版
    SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
    NEC [NEC]
  • 英文版
    SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
    NEC
  • 英文版
    MOS Field Effect Transistor
    KEXIN [Gua...
  • 英文版
    SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
    NEC [NEC]
  • 英文版
    MOS FIELD EFFECT TRANSISTOR
    NEC
  • 英文版
    MOS Field Effect Transistor
    KEXIN [Gua...
  • 英文版
    MOS FIELD EFFECT TRANSISTOR
    NEC [NEC]
  • 英文版
    MOS FIELD EFFECT TRANSISTOR
    NEC
  • 英文版
    MOS Field Effect Transistor
    KEXIN [Gua...
  • 英文版
    MOS FIELD EFFECT TRANSISTOR
    NEC [NEC]
  • 英文版
    MOS FIELD EFFECT TRANSISTOR
    NEC
  • 英文版
    MOS FIELD EFFECT TRANSISTOR
    NEC [NEC]
  • 英文版
    MOS FIELD EFFECT TRANSISTOR
    NEC
  • 英文版
    MOS Field Effect Transistors
    KEXIN [Gua...
  • 英文版
    MOS FIELD EFFECT TRANSISTOR
    NEC [NEC]
  • 英文版
    MOS FIELD EFFECT TRANSISTOR
    NEC
  • 英文版
    MOS Field Effect Transistor
    KEXIN [Gua...
  • 英文版
    MOS FIELD EFFECT TRANSISTOR
    NEC [NEC]

您可能感兴趣的PDF文件资料

扫码下载APP,
一键连接广大的电子世界。

在线人工客服

买家服务:
卖家服务:
技术客服:

0571-85317607

网站客服电话

0571-85317606

客服在线时间周一至周五
9:00-17:30

关注官方微信号,
第一时间获取资讯。

建议反馈

联系人:

联系方式:

按住滑块,拖拽到最右边
>>
感谢您向阿库提出的宝贵意见,您的参与是维库提升服务的动力!意见一经采纳,将有感恩红包奉上哦!