DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2111
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
The 2SK2111 is a N-channel MOS FET of a vertical type and
is a switching element that can be directly driven by the output of
an IC operating at 5 V.
This product has a low ON resistance and superb switching
motors and DC/DC converters.
characteristics and is ideal for driving the actuators, such as
PACKAGE DIMENSIONS (in mm)
4.5 卤 0.1
1.6 卤 0.2
2.5 卤 0.1
4.0 卤 0.25
1.5 卤 0.1
0.8 MIN.
S
0.42
卤0.06
D
G
FEATURES
鈥?Low ON resistance
R
DS(on)
= 0.6
鈩?/div>
MAX. @V
GS
= 4.0 V, I
D
= 0.5 A
鈥?High switching speed
t
on
+ t
off
< 100 ns
鈥?Low parasitic capacitance
0.42
0.47 卤0.06
1.5 卤0.06
3.0
0.41
+0.03
鈥?.05
EQUIVALENT CIRCUIT
Drain (D)
Gate (G)
Gate protection
diode
Source (S)
Marking: NU
Internal diode
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
SYMBOL
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
PW
鈮?/div>
10 ms,
Duty cycle
鈮?/div>
50 %
16 cm
2
脳
0.7 mm, ceramic substrate used
V
GS
= 0
V
DS
= 0
TEST CONDITIONS
RATING
60
卤20
卤1.0
卤2.0
UNIT
V
V
A
A
Total Power Dissipation
Channel Temperature
Storage Temperature
P
T
T
ch
T
stg
2.0
150
鈥?5 to +150
W
藲C
藲C
Document No. D11231EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
1996
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