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2SK2409 Datasheet

  • 2SK2409

  • MOS Field Effect Transistor

  • 109.26KB

  • NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2409
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2409 is N-Channel MOS Field Effect Transistor de-
signed for solenoid, motor, and lamp driver.
PACKAGE DIMENSION
(in millimeters)
10.0 卤0.3
4.5 卤0.2
3.2 卤0.2
2.7 卤0.2
FEATURES
鈥?/div>
Low On-Resistance
R
DS(on)
鈮?/div>
27 m鈩?(V
GS
= 10 V, I
D
= 20 A)
15.0 卤0.3
R
DS(on)
鈮?/div>
40 m鈩?(V
GS
= 4 V, I
D
= 20 A)
QUALITY GRADE
Standard
Please refer to 鈥淨uality grade on NEC Semiconductor Device鈥?/div>
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
2.54
0.7 卤0.1
4 卤0.2
13.5
MIN.
12.0 卤0.2
鈥?/div>
Low C
iss
C
iss
= 2040 pF TYP
.
鈥?/div>
Built-in Gate Protection Diode
3 卤0.1
1.3 卤0.2
1.5 卤0.2
2.54
2.5 卤0.1
0.65 卤0.1
1. Gate
2. Drain
3. Source
ABSOLUTE MAXIMUM RATINGS (T
a
= 25 藲C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
*
60
卤20
卤40
卤160
2.0
35
150
40
160
V
V
A
A
W
W
藲C
Gate
Drain
1 2 3
MP-45F (ISOLATED TO-220)
Total Power Dissipation (T
a
= 25 藲C) P
T1
Total Power Dissipation (T
c
= 25 藲C) P
T2
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
*
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1 %
T
ch
T
stg
I
AS
**
E
AS
**
鈥?5 to +150 藲C
A
mJ
Body
Diode
Gate Protection
Diode
Source
**
Starting T
ch
= 25 藲C, R
G
= 25
鈩?
V
GS
= 20 V
鈫?/div>
0
The information in this document is subject to change without notice.
Document No. TC-2489
(O. D. No. TC-8028)
Date Published September 1994 P
Printed in Japan
漏
1994

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