Power F-MOS FETs
2SK2538
2SK2538
Silicon N-Channel Power F-MOS
s
Features
q
Avalanche
Unit : mm
0.7卤0.1
10.0卤0.2
5.5卤0.2
2.7卤0.2
4.2卤0.2
4.2卤0.2
energy capability guaranteed
switching
16.7卤0.3
q
High-speed
q
No
secondary breakdown
7.5卤0.2
酶3.1卤0.1
s
Applications
q
High-speed
q
For
switching (switching mode regulator)
4.0
high-frequency power amplification
14.0卤0.5
1.4卤0.1
1.3卤0.2
Solder Dip
0.5
+0.2
-0.1
0.8卤0.1
s
Absolute Maximum Ratings
(Tc = 25藲C)
Parameter
Drain-Source breakdown voltage
Gate-Source voltage
Drain current
DC
Pulse
T
C
= 25藲C
Ta= 25藲C
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Rating
250
卤30
卤2
卤4
10
30
2
150
鈥?5 to +150
Unit
V
V
A
A
mJ
W
藲C
藲C
2.54卤0.25
5.08卤0.5
1
2
3
Avalanche energy capability
Allowable power
dissipation
Channel temperature
Storage temperature
* L= 5mH, I
L
= 2A, V
DD
= 30V, 1 pulse
1 : Gate
2 : Drain
3 : Source
TO-220 Full Pack Package (a)
s
Electrical Characteristics
(Tc = 25藲C)
Parameter
Drain-Source cut-off current
Gate-Source leakage current
Drain-Source breakdown voltage
Gate threshold voltage
Drain-Source ON-resistance
Forward transadmittance
Diode forward voltage
Input capacitance
Output capacitance
Feedback capacitance
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Channel-Case heat resistance
Channel-Atmosphere heat resistance
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
R
th(ch-a)
V
DD
= 200V, I
D
= 2A
V
GS
=10V, R
L
=100鈩?/div>
V
DS
=10V, V
GS
= 0, f=1MHz
Condition
V
DS
= 200V, V
GS
= 0
V
GS
=卤30V, V
DS
= 0
I
D
=1mA, V
GS
= 0
V
DS
=10V, I
D
=1mA
V
GS
=10V, I
D
=1A
V
DS
= 25V, I
D
=1A
I
DR
= 2A, V
GS
= 0
220
60
20
10
20
45
90
4.17
62.5
0.5
250
1
1.2
1
鈥?.6
5
2
Min
Typ
Max
100
卤1
Unit
碌A
碌A
V
V
鈩?/div>
S
V
pF
pF
pF
ns
ns
ns
ns
藲C/W
藲C/W
1
2
3
