鈮?/div>
1%
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
deveice acutally used, an addtional protection circiut is externally required if voltage exceeding the rated voltage
may be applied to this device.
V
DSS
V
GSS
I
D (DC)
I
D (pulse)
P
T
P
T
T
ch
T
stg
60
卤20
卤25
卤100
2.0
25
150
鈭?5
to +150
V
V
A
A
W
W
掳C
掳C
Gate
Drain
Body
Diode
Gate Protection
Diode
Source
The information in this document is subject to change without notice.
Document No. D10623EJ2V0DS00 (2nd edition)
Date Published April 1996 P
Printed in Japan
漏
1994