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2SK3481-S Datasheet

  • 2SK3481-S

  • NEC [SWITCHING N-CHANNEL POWER MOS FET]

  • 78.63KB

  • NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3481
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3481 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3481
2SK3481-S
2SK3481-ZJ
2SK3481-Z
PACKAGE
TO-220AB
TO-262
TO-263
TO-220SMD
Note
FEATURES
鈥?/div>
Super low on-state resistance:
R
DS(on)1
= 50 m鈩?MAX. (V
GS
= 10 V, I
D
= 15 A)
R
DS(on)2
= 58 m鈩?MAX. (V
GS
= 4.5 V, I
D
= 15 A)
鈥?/div>
Low C
iss
: C
iss
= 2300 pF TYP.
鈥?/div>
Built-in gate protection diode
Note
TO-220SMD package is produced only
in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25掳C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25掳C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
100
卤20
卤30
卤60
56
1.5
150
鈥?5 to +150
26
68
V
V
A
A
W
W
掳C
掳C
A
mJ
(TO-263, TO-220SMD)
(TO-262)
Total Power Dissipation (T
C
= 25掳C)
Total Power Dissipation (T
A
= 25掳C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
鈮?/div>
10
碌
s, Duty cycle
鈮?/div>
1%
2.
Starting T
ch
= 25掳C, V
DD
= 50 V, R
G
= 25
鈩?
V
GS
= 20
鈫?/div>
0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A)
2.23
83.3
掳C/W
掳C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D15063EJ1V0DS00 (1st edition)
Date Published January 2002 NS CP(K)
Printed in Japan
漏
2002

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