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2SK3482-Z Datasheet

  • 2SK3482-Z

  • NEC [SWITCHING N-CHANNEL POWER MOSFET]

  • 165.49KB

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3482
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3482 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3482
2SK3482-Z
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3Z)
FEATURES
鈥?/div>
Low on-state resistance
R
DS(on)1
= 33 m鈩?MAX. (V
GS
= 10 V, I
D
= 18 A)
R
DS(on)2
= 39 m鈩?MAX. (V
GS
= 4.5 V, I
D
= 18 A)
鈥?/div>
Low C
iss
: C
iss
= 3600 pF TYP.
鈥?/div>
Built-in gate protection diode
鈥?/div>
TO-251/TO-252 package
(TO-251)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25掳C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (Pulse)
Note1
Total Power Dissipation (T
C
= 25掳C)
Total Power Dissipation (T
A
= 25掳C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
Notes 1.
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1%
2.
Starting T
ch
= 25掳C, R
G
= 25
鈩?/div>
,
V
GS
= 20
鈫?/div>
0 V
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
I
AS
E
AS
100
卤20
卤36
卤100
50
1.0
150
鈥?5 to +150
30
90
V
V
A
A
W
W
掳C
掳C
A
mJ
(TO-252)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15064EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2001

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