3003 Datasheet

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3003

3 Watts - 28 Volts, Class C

Microwave 3000 MHz

GENERAL DESCRIPTION

The 3003 is a COMMON BASE transistor capable of providing 3 Watts Class

C, RF output power at 3000 MHz. Gold metalization and diffused ballasting

are used to provide high reliability and supreme ruggedness. The transistor

uses a fully hermetic High Temperature Solder Sealed package.

CASE OUTLINE

55BT-1, STYLE 1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25

o

C

Maximum Voltage and Current

BVces

Collector to Emitter Voltage

BVebo

Emitter to Base Voltage

Ic

Collector Current

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

10 Watts

50 Volts

3.5 Volts

0.6 A

- 65 to + 200

o

C

+ 200

o

C

ELECTRICAL CHARACTERISTICS @ 25

O

C

SYMBOL

Pout

Pin

Pg

CHARACTERISTICS

Power Out

Power Input

Power Gain

Collector Efficiency

Load Mismatch Tolerance

TEST CONDITIONS

F = 3.0 GHz

Vcb = 28 Volts

Po = 3 Watts

As Above

F = 3 GHz, Po = 3 W

MIN

3.0

0.75

6.0

30

30:1

TYP

MAX

UNITS

Watt

Watt

dB

%

畏

c

VSWR

1

BVces

BVebo

Icbo

h

FE

Cob

胃

jc

Collector to Emitter Breakdown

Emitter to Base Breakdown

Collector to Base Current

Current Gain

Output Capacitance

Thermal Resistance

Ic = 30 mA

Ie = 3 mA

Vcb = 28 Volts

50

3.5

1.5

10

7.0

17

Volts

Volts

m

A

o

Vce = 5 V, Ic = 300 mA

F =1.0 MHz, Vcb = 28 V

pF

C/W

Issue August 1996

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT

BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,

THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

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  英文版
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