HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
DESCRIPTION
The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting
diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
H11D1
H11D2
H11D3
H11D4
4N38
FEATURES
鈥?High Voltage
- H11D1, H11D2, BV
CER
= 300 V
- H11D3, H11D4, BV
CER
= 200 V
鈥?High isolation voltage
- 5300 VAC RMS - 1 minute
- 7500 VAC PEAK - 1 minute
鈥?Underwriters Laboratory (UL) recognized File# E90700
ANODE 1
6 BASE
APPLICATIONS
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Power supply regulators
Digital logic inputs
Microprocessor inputs
Appliance sensor systems
Industrial controls
CATHODE 2
5 COLLECTOR
N/C 3
4 EMITTER
ABSOLUTE MAXIMUM RATINGS
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ T
A
= 25掳C
Derate above 25掳C
EMITTER
*Forward DC Current
*Reverse Input Voltage
*Forward Current - Peak (1碌s pulse, 300pps)
*LED Power Dissipation @ T
A
= 25掳C
Derate above 25掳C
Symbol
T
STG
T
OPR
T
SOL
P
D
I
F
V
R
I
F
(pk)
P
D
Value
-55 to +150
-55 to +100
260 for 10 sec
260
3.5
80
6.0
3.0
150
1.41
Units
掳C
掳C
掳C
mW
mW/掳C
mA
V
A
mW
mW/掳C
8/9/00
200046A
4N38S 产品属性
1,000
隔离器
光隔离器 - 晶体管，光电输出
-
1
DC
5300Vrms
20% @ 2mA
-
80V
100mA
80mA
1V
有基极的晶体管
表面贴装
6-SMD
管件
4N38S相关型号PDF文件下载
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型号
版本
描述
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