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74V2G03STR Datasheet

  • 74V2G03STR

  • DUAL 2-INPUT OPEN DRAIN NAND GATE

  • 132.32KB

  • 7页

  • STMICROELECTRONICS   STMICROELECTRONICS

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74V2G03
DUAL 2-INPUT OPEN DRAIN NAND GATE
s
s
s
s
s
s
HIGH SPEED: t
PD
= 3.9ns (TYP.) at V
CC
= 5V
LOW POWER DISSIPATION:
I
CC
= 1碌A(MAX.) at T
A
= 25掳C
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28% V
CC
(MIN.)
POWER DOWN PROTECTION ON INPUTS
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 5.5V
IMPROVED LATCH-UP IMMUNITY
ORDER CODES
PACKAGE
SOT23-8L
SOT23-8L
DESCRIPTION
The 74V2G03 is an advanced high-speed CMOS
DUAL 2-INPUT OPEN DRAIN NAND GATE
fabricated with sub-micron silicon gate and
double-layer metal wiring C
2
MOS technology.
The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunity and stable output.
The device can, with an external pull-up resistor,
be used in wired AND configuration. This device
T&R
74V2G03STR
can also be used as a led driver in any other
application requiring current sink.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
PIN CONNECTION AND IEC LOGIC SYMBOLS
June 2003
1/7

74V2G03STR 产品属性

  • STMicroelectronics

  • NAND

  • 74V

  • Dual

  • 2 / 1

  • 8 mA

  • 9.5 ns, 6.5 ns

  • 5.5 V

  • 2 V

  • + 125 C

  • SMD/SMT

  • SOT-23-8

  • Reel

  • - 55 C

  • 2

  • 1

  • 3000

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