ADG1211 Datasheet

  • ADG1211

  • Low Capacitance, Low Charge Injection,±15 V/+12 V iCMOS? Qu...

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Preliminary Technical Data
FEATURES
2 pF off capacitance
1 pC charge injection
33 V supply range
150 鈩?on resistance
Fully specified at +12 V, 卤15 V
No V
L
supply required
3 V logic-compatible inputs
Rail-to-rail operation
16-lead TSSOP and 16-lead LFCSP packages
Typical power consumption: <0.03 碌W
1 pF Off Capacitance, 1 pC Charge Injection,
卤15 V/12 V
iCMOS鈩?/div>
Quad SPST Switches
ADG1211/ADG1212/ADG1213
FUNCTIONAL BLOCK DIAGRAM
S1
IN1
D1
S2
IN2
IN2
D2
S3
IN3
D3
S4
IN4
D4
IN4
D4
IN3
D3
S4
IN4
04778-0-001
S1
IN1
D1
S2
IN2
D2
S3
IN3
IN1
S1
D1
S2
D2
ADG1211
ADG1212
ADG1213
S3
D3
S4
D4
SWITCHES SHOWN FOR A LOGIC 1 INPUT
APPLICATIONS
Automatic test equipment
Data aquisition systems
Battery-powered systems
Sample-and-hold systems
Audio signal routing
Video signal routing
Communication systems
Figure 1.
iCMOS
construction ensures ultralow power dissipation,
making the parts ideally suited for portable and battery-
powered instruments.
The ADG1211/ADG1212/ADG1213 contain four independent
single-pole/single-throw (SPST) switches. The ADG1211 and
ADG1212 differ only in that the digital control logic is inverted.
The ADG1211 switches are turned on with Logic 0 on the
appropriate control input, while Logic 1 is required for the
ADG1212. The ADG1213 has two switches with digital control
logic similar to that of the ADG1211; the logic is inverted on the
other two switches. Each switch conducts equally well in both
directions when on, and has an input signal range that extends
to the supplies. In the off condition, signal levels up to the
supplies are blocked.
The ADG1213 exhibits break-before-make switching action for
use in multiplexer applications. Inherent in the design is low
charge injection for minimum transients when switching the
digital inputs.
GENERAL DESCRIPTION
The ADG1211/ADG1212/ADG1213 are monolithic CMOS
devices containing four independently selectable switches
designed on an
iCMOS
process.
iCMOS
(industrial-CMOS) is a
modular manufacturing process combining high voltage CMOS
(complementary metal-oxide semiconductor) and bipolar
technologies. It enables the development of a wide range of high
performance analog ICs capable of 30 V operation in a footprint
that no previous generation of high voltage parts has been able
to achieve. Unlike analog ICs using conventional CMOS proc-
esses,
iCMOS
components can tolerate high supply voltages,
while providing increased performance, dramatically lower
power consumption, and reduced package size.
The ultralow capacitance and charge injection of these switches
make them ideal solutions for data acquisition and sample-and-
hold applications, where low glitch and fast settling are required.
Fast switching speed coupled with high signal bandwidth make
the parts suitable for video signal switching.
PRODUCT HIGHLIGHTS
1.
2.
3.
4.
5.
6.
2 pF off capacitance (卤15 V supply).
1 pC charge injection.
3 V logic-compatible digital inputs: V
IH
= 2.0 V, V
IL
= 0.8 V.
No V
L
logic power supply required.
Ultralow power dissipation: <0.03 碌W.
16-lead TSSOP and 4 mm 脳 4 mm LFCSP packages.
Rev. PrE
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.326.8703
漏 2004 Analog Devices, Inc. All rights reserved.

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