APT18M80B
APT18M80S
800V, 18A, 0.56鈩?Max
N-Channel MOSFET
Power MOS
is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low C
rss
"Miller" capaci-
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in 铿倅back, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
8
鈩?/div>
TO
-2
47
D
3
PAK
APT18M80B
Single die MOSFET
APT18M80S
D
G
S
FEATURES
鈥?Fast switching with low EMI/RFI
鈥?Low R
DS(on)
鈥?Ultra low C
rss
for improved noise immunity
鈥?Low gate charge
鈥?Avalanche energy rated
鈥?RoHS compliant
TYPICAL APPLICATIONS
鈥?PFC and other boost converter
鈥?Buck converter
鈥?Two switch forward (asymmetrical bridge)
鈥?Single switch forward
鈥?Flyback
鈥?Inverters
Absolute Maximum Ratings
Symbol
I
D
I
DM
V
GS
E
AS
I
AR
Parameter
Continuous Drain Current @ T
C
= 25掳C
Continuous Drain Current @ T
C
= 100掳C
Pulsed Drain Current
Gate-Source Voltage
Single Pulse Avalanche Energy
2
Avalanche Current, Repetitive or Non-Repetitive
1
Ratings
18
12
70
卤30
795
9
Unit
A
V
mJ
A
Thermal and Mechanical Characteristics
Symbol
P
D
R
胃
JC
R
胃
CS
T
J
,T
STG
T
L
W
T
Characteristic
Total Power Dissipation @ T
C
= 25掳C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
Soldering Temperature for 10 Seconds (1.6mm from case)
Package Weight
0.22
6.2
10
1.1
-55
0.11
150
300
Min
Typ
Max
500
0.25
Unit
W
掳C/W
掳C
2-2007
050-8112
Rev A
oz
g
in路lbf
N路m
Torque
Mounting Torque ( TO-247 Package), 6-32 or M3 screw
Microsemi Website - http://www.microsemi.com
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