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AT28C040数据手册封面

AT28C040 Datasheet

  • AT28C040

  • 4 Megabit (512K x 8)

  • 537.80KB

  • Atmel

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Features
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Read Access Time - 200 ns
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Automatic Page Write Operation
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鈥?Internal Address and Data Latches for 256 Bytes
鈥?Internal Control Timer
Fast Write Cycle Time
鈥?Page Write Cycle Time - 10 ms Maximum
鈥?1 to 256 Byte Page Write Operation
Low Power Dissipation
鈥?80 mA Active Current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
鈥?Endurance: 10,000 Cycles
鈥?Data Retention: 10 Years
Single 5V
卤
10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-Wide Pinout
4-Megabit
(512K x 8)
Paged E
2
PROM
AT28C040
Description
The AT28C040 is a high-performance electrically erasable and programmable read
only memory (E
2
PROM). Its 4 megabits of memory is organized as 524,288 words by
8 bits. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device
offers access times to 200 ns with power dissipation of just 440 mW.
(continued)
Pin Configurations
Pin Name
A0 - A18
CE
OE
WE
I/O0 - I/O7
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
SIDE BRAZE,
FLATPACK
Top View
LCC
Top View
AT28C040 4-
Megabit (512K x
8) Paged
E
2
PROM
Rev. 0542B鈥?4/98
1

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