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鈥?Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout
鈥?Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
Fast Word Program Time 鈥?12 碌s
Fast Sector Erase Time 鈥?300 ms
Suspend/Resume Feature for Erase and Program
鈥?Supports Reading and Programming from Any Sector by Suspending Erase
of a Different Sector
鈥?Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending
Programming of Any Other Byte/Word
Low-power Operation
鈥?12 mA Active
鈥?13 碌A Standby
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
VPP Pin for Write Protection
RESET Input for Device Initialization
Sector Lockdown Support
TSOP and CBGA Package Options
Top or Bottom Boot Block Configuration Available
128-bit Protection Register
Minimum 100,000 Erase Cycles
Common Flash Interface (CFI)
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32-megabit
(2M x 16/4M x 8)
3-volt Only
Flash Memory
AT49BV322A
AT49BV322AT
Description
The AT49BV322A(T) is a 2.7-volt 32-megabit Flash memory organized as 2,097,152
words of 16 bits each or 4,194,304 bytes of 8 bits each. The x16 data appears on I/O0
- I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 71 sectors for
erase operations. The device is offered in a 48-lead TSOP and a 48-ball CBGA pack-
age. The device has CE and OE control signals to avoid any bus contention. This
device can be read or reprogrammed using a single power supply, making it ideally
suited for in-system programming.
Pin Configurations
Pin Name
A0 - A20
CE
OE
WE
RESET
RDY/BUSY
VPP
I/O0 - I/O14
I/O15 (A-1)
BYTE
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Reset
READY/BUSY Output
Write Protection
Data Inputs/Outputs
I/O15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
Selects Byte or Word Mode
No Connect
3308H鈥揊LASH鈥?/04
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