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Single Voltage Operation
- 5V Read
- 5V Reprogramming
Fast Read Access Time - 90 ns
Internal Erase/Program Control
Sector Architecture
- One 8K Words (16K bytes) Boot Block with Programming Lockout
- Two 8K Words (16K bytes) Parameter Blocks
- One 232K Words (464K bytes) Main Memory Array Block
Fast Sector Erase Time - 10 seconds
Word-By-Word Programming - 50
碌s/Word
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
- 50 mA Active Current
- 300
碌A
CMOS Standby Current
Typical 10,000 Write Cycles
4 Megabit
(256K x 16)
5-volt Only
CMOS Flash
Memory
Preliminary
Description
The AT49F4096 is a 5-volt-only, 4 megabit Flash Memory organized as 256K words
of 16 bits each. Manufactured with Atmel鈥檚 advanced nonvolatile CMOS technology,
the device offers access times to 90 ns with power dissipation of just 275 mW. When
deselected, the CMOS standby current is less than 300
碌A.
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Pin Configurations
Pin Name
A0 - A17
CE
OE
WE
RESET
I/O0 - I/O15
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Reset
Data
Inputs/Outputs
No Connect
AT49F4096
SOIC (SOP)
TSOP Top View
Type 1
0569C
4-219