AT49SV12804-70TI Datasheet_PDF文件下载_芯片资料查询

High Performance

鈥?Random Access Time 鈥?70 ns

鈥?Page Mode Read Time 鈥?20 ns

鈥?Synchronous Burst Frequency 鈥?66 MHz

鈥?Configurable Burst Operation

Sector Erase Architecture

鈥?Sixteen 4K Word Sectors with Individual Write Lockout

鈥?Two Hundred Fifty-four 32K Word Main Sectors with Individual Write Lockout

Typical Sector Erase Time: 32K Word Sectors 鈥?500 ms; 4K Word Sectors 鈥?100 ms

Thirty-two Plane Organization, Permitting Concurrent Read in Any of the Thirty-one

Planes not Being Programmed/Erased

Suspend/Resume Feature for Erase and Program

鈥?Supports Reading and Programming Data from Any Sector by Suspending Erase

of a Different Sector

鈥?Supports Reading Any Word by Suspending Programming of Any Other Word

Low-power Operation

鈥?30 mA Active

鈥?10 碌A Standby

VPP Pin for Write Protection and Accelerated Program/Erase Operations

RESET Input for Device Initialization

CBGA and TSOP Packages

Seventeen 128-bit Protection Registers (2,176 Bits)

Common Flash Interface (CFI)

鈥?/div>

128-megabit

(8M x 16)

Burst/Page

Mode 1.8-volt

Flash Memory

AT49SN12804

AT49SV12804

Description

The AT49SN/SV12804 is a 1.8-volt 128-megabit Flash memory. The memory is

divided into multiple sectors and planes for erase operations. The AT49SN/SV12804

is organized as 8,388,608 x 16 bits. The device can be read or reprogrammed off a

single 1.8V power supply, making it ideally suited for In-System programming. The

device can be configured to operate in the asynchronous/page read (default mode) or

burst read mode (not available for the AT49SV12804). The burst read mode is used to

achieve a faster data rate than is possible in the asynchronous/page read mode. If the

AVD and the CLK signals are both tied to GND and the burst configuration register is

configured to perform asynchronous reads, the device will behave like a standard

asynchronous Flash memory. In the page mode, the AVD signal can be tied to GND or

can be pulsed low to latch the page address. In both cases the CLK can be tied to

GND.

The AT49SN/SV12804 is divided into thirty-two memory planes. A read operation can

occur in any of the thirty-one planes which is not being programmed or erased. This

concurrent operation allows improved system performance by not requiring the sys-

tem to wait for a program or erase operation to complete before a read is performed.

To further increase the flexibility of the device, it contains an Erase Suspend and Pro-

gram Suspend feature. This feature will put the erase or program on hold for any

amount of time and let the user read data from or program data to any of the remain-

ing sectors. There is no reason to suspend the erase or program operation if the data

to be read is in another memory plane.

The VPP pin provides data protection and faster programming and erase times. When

the V

PP

input is below 0.4V, the program and erase functions are inhibited. When V

PP

is at 0.9V or above, normal program and erase operations can be performed. With V

PP

at 12.0V, the program (Dual-word Program command) and erase operations are

accelerated.

Preliminary

Rev. 3314A鈥揊LASH鈥?/04

1

型号

版本

描述

厂商

下载
AT494

英文版

PROTECTIVE GUARD KB SER SQ&RND

AT494
AT495

英文版

COVER DUST POLY FOR KB SERIES

AT495
AT498

英文版

CENTER BARRIER BLACK POLY LB SER

AT498
AT499

英文版

PROTECTIVE GUARD FOR LB SER SQ

AT499
AT496A

英文版

Round Pushbutton Switch Cap Black Slip On

AT496A
AT496C

英文版

Round Pushbutton Switch Cap Red Slip On

AT496C
AT49BV

英文版

128K x 8 (1M bit), 2.7-Volt (BV)/3-Volt (LV) Read and 2.7-Vo...

AT49BV
AT49F001

英文版

1-Megabit 128K x 8 5-volt Only Flash Memory

AT49F001
AT49F001

英文版

1-Megabit 128K x 8 5-volt Only Flash Memory

ATMEL [ATM...

AT49F001
AT49F002

英文版

2-Megabit 256K x 8 5-volt Only Flash Memory

AT49F002
AT49F002

英文版

2-megabit (256K x 8) 5-volt Only Flash Memory

ATMEL [ATM...

AT49F002
AT49F002

英文版

2-Megabit 256K x 8 5-volt Only Flash Memory

ATMEL [ATM...

AT49F002
AT49F004

英文版

4-Megabit CMOS Flash Memory

ETC

AT49F004
AT49F004

英文版

ATMEL Corporation [4-Megabit 512K x 8/ 256K x 16 CMOS Flash...

AT49F004
AT49F008

英文版

8-Megabit 5-volt Only Flash Memory

ETC

AT49F008
AT49F008

英文版

8-Megabit 1M x 8 5-volt Only Flash Memory

AT49F008
AT49F010

英文版

ATMEL Corporation [1-Megabit 128K x 8 5-volt Only CMOS Flas...

AT49F010
AT49F020

英文版

ATMEL Corporation [2-Megabit 256K x 8 5-volt Only CMOS Flas...

AT49F020
AT49F040

英文版

4 Megabit 512K x 8 5-volt Only CMOS Flash Memory

AT49F040
AT49F040

英文版

4-Megabit 512K x 8 5-volt Only CMOS Flash Memory

ATMEL [ATM...

AT49F040

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