Philips Semiconductors
Product specification
Thyristor
logic level
GENERAL DESCRIPTION
Glass passivated, sensitive gate
thyristor in a plastic envelope, suitable
for surface mounting, intended for use
in general purpose switching and
phase control applications. This
device is intended to be interfaced
directly to microcontrollers, logic
integrated circuits and other low
power gate trigger circuits.
BT169W Series
QUICK REFERENCE DATA
SYMBOL
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
PARAMETER
BT169
Repetitive peak
off-state voltages
Average on-state
current
RMS on-state current
Non-repetitive peak
on-state current
MAX. MAX. MAX. MAX. UNIT
BW
200
0.5
0.8
8
DW
400
0.5
0.8
8
EW
500
0.5
0.8
8
GW
600
0.5
0.8
8
V
A
A
A
PINNING - SOT223
PIN
1
2
3
tab
DESCRIPTION
cathode
anode
gate
anode
PIN CONFIGURATION
4
SYMBOL
a
k
1
2
3
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
-
half sine wave;
T
sp
鈮?/div>
112 藲C
all conduction angles
half sine wave;
T
j
= 25 藲C prior to surge
t = 10 ms
t = 8.3 ms
t = 10 ms
I
TM
= 2 A; I
G
= 10 mA;
dI
G
/dt = 100 mA/碌s
-
-
-
-
-
-
-
-
-
-
-
-40
-
B
200
1
MAX.
D
400
1
E
500
1
G
600
1
UNIT
V
A
A
A
A
A
2
s
A/碌s
A
V
V
W
W
藲C
藲C
V
DRM
, V
RRM
Repetitive peak off-state
voltages
I
T(AV)
I
T(RMS)
I
TSM
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
0.63
1
8
9
0.32
50
1
5
5
2
0.1
150
125
I
2
t
dI
T
/dt
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/碌s.
September 1997
1
Rev 1.200
1
2
3
4
5
6
7
