Philips Semiconductors
Product specification
Insulated Gate Bipolar Transistor
Protected Logic-Level IGBT
GENERAL DESCRIPTION
Protected N-channel logic-level
insulated gate bipolar power
transistor in a plastic envelope
suitable for surface mount
applications. It is intended for
automotive ignition applications, and
has integral zener diodes providing
active collector voltage clamping and
ESD protection up to 2 kV.
BUK866-400 IZ
QUICK REFERENCE DATA
SYMBOL PARAMETER
V
(CL)CER
V
CEsat
I
C
P
tot
E
CERS
Collector-emitter clamp voltage
Collector-emitter on-state voltage
Collector current (DC)
Total power dissipation
Clamped energy dissipation
MIN. TYP. MAX. UNIT
350
400
500
2.2
20
100
300
V
V
A
W
mJ
PINNING - SOT404
PIN
1
2
3
tab
gate
collector
emitter
collector
DESCRIPTION
PIN CONFIGURATION
mb
SYMBOL
c
g
2
1
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
CE
V
CE
卤V
GE
I
C
I
C
I
CM
I
CLM
E
CERS
E
CERR
E
ECR
P
tot
T
stg
T
j
PARAMETER
Collecter-emitter voltage
Collector-emitter voltage
Gate-emitter voltage
Collector current (DC)
Collector current (DC)
Collector current (pulsed peak value,
on-state)
Collector current (clamped inductive
load)
Clamped turn-off energy
(non-repetitive)
Clamped turn-off energy (repetitive)
Reverse avalanche energy
(repetitive)
Total power dissipation
Storage temperature
Operating Junction Temperature
CONDITIONS
t
p
鈮?/div>
500
碌s
Continuous
-
T
mb
= 100 藲C
T
mb
= 25 藲C
T
mb
= 25 藲C; t
p
鈮?/div>
10 ms;
V
CE
鈮?/div>
15 V
1 k鈩?/div>
鈮?/div>
R
G
鈮?/div>
10 k鈩?/div>
T
mb
= 25 藲C; I
C
= 10 A; R
G
= 1 k鈩?
see Figs. 23,24
T
mb
= 125 藲C; I
C
= 8 A; R
G
= 1 k鈩?
f = 50 Hz; t = 60 min.
I
E
= 1 A; f = 50 Hz
T
mb
= 25 藲C
-
-
MIN.
-
-20
-
-
-
-
-
-
-
-
-
-55
-40
MAX.
500
50
12
10
20
25
10
300
125
5
125
150
150
UNIT
V
V
V
A
A
A
A
mJ
mJ
mJ
W
藲C
藲C
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model
(100 pF, 1.5 k鈩?
MIN.
-
MAX.
2
UNIT
kV
December 1996
1
Rev. 1.100
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