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High Voltage NPN Power Transistor

For Isolated Package Applications

The BUT11AF was designed for use in line operated switching

power supplies in a wide range of end use applications. This device

combines the latest state of the art bipolar fabrication techniques to

provide excellent switching, high voltage capability and low

saturation voltage.

BUT11AF

POWER TRANSISTOR

5.0 AMPERES

450 VOLTS

40 WATTS

鈥?/div>

1000 Volt V

CES

Rating

Low Base Drive Requirements

Isolated Overmold Package

Improved System Efficiency

No Isolating Washers Required

Reduced System Cost

High Isolation Voltage Capability (4500 V

RMS

)

CASE 221D鈥?2

TO鈥?20 TYPE

MAXIMUM RATINGS

Rating

Collector鈥揈mitter Sustaining Voltage

Collector鈥揈mitter Breakdown Voltage

Emitter鈥揃ase Voltage

RMS Isolation Voltage (For 1 sec,

T

A

= 25掳C, Rel. Humidity < 30%)

Per Figure 7

Per Figure 8

Per Figure 9

Collector Current 鈥?Continuous

Collector Current

鈥?Pulsed (1)

Base Current 鈥?Continuous

Base Current

鈥?Pulsed (1)

Total Power Dissipation @ T

C

= 25掳C*

Derated above 25掳C

Operating and Storage Temperature Range

Symbol

V

CEO(sus)

V

CES

V

EBO

V

ISOL1

V

ISOL2

V

ISOL3

I

C

I

CM

I

B

I

BM

P

D

T

J

, T

stg

Value

450

1000

9.0

4500

3500

2500

5.0

10

2.0

4.0

40

0.32

鈥?65 to +150

Adc

Watts

W/掳C

掳C

V

Unit

Vdc

THERMAL CHARACTERISTICS

Thermal Resistance 鈥?Junction to Case*

Maximum Lead Temperature for soldering purposes

1/8鈥?from case for 5 sec.

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle

鈮?/div>

10%.

*Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die),

the device mounted on a heatsink, thermal grease applied, and a mounting torque of 6 to 8 in

.

lbs.

R

胃JC

T

L

3.125

260

掳C/W

掳C

漏

Semiconductor Components Industries, LLC, 2001

1

March, 2001 鈥?Rev. 4

Publication Order Number:

BUT11AF/D

型号

版本

描述

厂商

下载
BUT11

英文版

NPN SILICON POWER TRANSISTOR

POINN

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英文版

High Voltage Power Switching Applications

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SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)

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