Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11AI
GENERAL DESCRIPTION
Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high
frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control
systems etc.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector Saturation current
Inductive fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
2.5
0.08
MAX.
1000
450
5
10
100
1.5
0.15
UNIT
V
V
A
A
W
V
A
碌s
T
mb
鈮?/div>
25 藲C
I
C
= 2.5 A; I
B
= 0.33 A
I
Con
= 2.5 A; I
Bon
= 0.5 A
PINNING - TO220AB
PIN
1
2
3
tab
base
collector
emitter
collector
DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
c
b
1 23
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-65
-
MAX.
1000
450
5
10
2
4
100
150
150
UNIT
V
V
A
A
A
A
W
藲C
藲C
T
mb
鈮?/div>
25 藲C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
in free air
CONDITIONS
TYP.
-
-
MAX.
1.25
60
UNIT
K/W
K/W
August 1997
1
Rev 1.000
1
2
3
4
