Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUX86P
BUX87P
GENERAL DESCRIPTION
High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use in
converters, inverters, switching regulators, motor control systems and switching applications.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
V
CESAT
I
C
I
CM
P
tot
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector-emitter saturation voltage
Collector current (DC)
Collector current peak value
Total power dissipation
Fall time
CONDITIONS
V
BE
= 0 V
I
C
= 0.2 A; I
B
= 20 mA
T
mb
鈮?/div>
25 藲C
I
C
= 0.2 A; I
B(on)
= 20 mA
TYP.
BUX
-
-
-
-
-
-
0.28
MAX.
86P
800
400
1
0.5
1
42
-
87P
1000
450
V
V
V
A
A
W
碌s
UNIT
PINNING - SOT82
PIN
1
2
3
DESCRIPTION
emitter
collector
base
PIN CONFIGURATION
SYMBOL
c
b
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (DC)
Collector current (peak value) t
p
= 2 ms
Base current (DC)
Base current (peak value)
Reverse base current (peak value)
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
BUX
-
-
-
-
-
-
-
-
-
-40
-
MAX.
86P
800
400
87P
1000
450
5
0.5
1
0.2
0.3
0.3
42
150
150
V
V
V
A
A
A
A
A
W
藲C
藲C
UNIT
T
mb
鈮?/div>
25 藲C
1
Turn-off current.
November 1995
1
Rev 1.100
1
2
3
4
5
6
