BYW52...BYW56
Vishay Telefunken
Silicon Mesa Rectifiers
Features
D
D
D
D
D
D
Controlled avalanche characteristics
Glass passivated junction
Hermetically sealed package
Low reverse current
High surge current loading
Electrically equivalent diodes:
BYW52 鈥?1N5059
BYW53 鈥?1N5060
BYW54 鈥?1N5061
BYW55 鈥?1N5062
94 9539
Applications
Rectifier, general purpose
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Reverse voltage
g
=Repetitive peak reverse voltage
Test Conditions
Type
BYW52
BYW53
BYW54
BYW55
BYW56
Symbol
V
R
=V
RRM
V
R
=V
RRM
V
R
=V
RRM
V
R
=V
RRM
V
R
=V
RRM
I
FSM
I
FRM
I
FAV
P
R
E
R
i
2
*t
T
j
=T
stg
Value
200
400
600
800
1000
50
12
2
1000
20
Unit
V
V
V
V
V
A
A
A
W
mJ
A
2
*s
掳
C
Peak forward surge current
Repetitive peak forward current
Average forward current
Pulse avalanche peak power
t
p
=10ms, half sinewave
蠒=180
掳
t
p
=20
m
s half sinus wave,
T
j
=175
掳
C
Pulse energy in avalanche mode, I
(BR)R
=1A, T
j
=175
掳
C
non repetitive
(inductive load switch off)
i
2
* t鈥搑ating
Junction and storage
temperature range
8
鈥?5...+175
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
l=10mm, T
L
=constant
on PC board with spacing 25mm
Symbol
R
thJA
R
thJA
Value
45
100
Unit
K/W
K/W
Document Number 86049
Rev. 2, 24-Jun-98
www.vishay.de
鈥?/div>
FaxBack +1-408-970-5600
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