CEP60N10/CEB60N10
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 60A, R
DS(ON)
= 23.5m鈩?@V
GS
= 10V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
PRELIMINARY
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
G
D
S
CEP SERIES
TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
P
D
E
AS
I
AS
T
J
,T
stg
Limit
100
Units
V
V
A
A
W
W/ C
mJ
A
C
卤
20
60
240
200
1.3
148
46
-55 to 175
Maximum Power Dissipation @ T
C
= 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy
d
Single Pulsed Avalanche Current
d
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
胃JC
R
胃JA
Limit
0.75
62.5
Units
C/W
C/W
2004.December
4 - 114
http://www.cetsemi.com
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