0.153鈩?/div>
I
D
15A
15A
15A
15A
d
@V
GS
10V
10V
10V
10V
D
PRELIMINARY
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
G
D
S
CEI SERIES
TO-262(I2-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation @ T
C
= 25 C
- Derate above 25 C
Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Limit
Symbol
TO-220/263/262
V
DS
V
GS
I
D
I
DM
e
P
D
T
J
,T
stg
15
60
83
0.56
150
TO-220F
Units
V
V
卤
25
15
39
0.26
-55 to 175
d
A
A
W
W/ C
C
60
d
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
胃JC
R
胃JA
1.8
62.5
Limit
3.8
65
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2005.June
http://www.cetsemi.com
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