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CS86 Datasheet

  • CS86

  • Fujitsu Media Devices Limited [The CS86 series of 0.18 mm s...

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  • FUJITSU   FUJITSU

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FUJITSU SEMICONDUCTOR
DATA SHEET
DS06-20209-2E
Semicustom
CMOS
Standard cell
CS86 Series
s
DESCRIPTION
The CS86 series of 0.18
碌m
standard cells is a line of CMOS ASICs based on higher integration implemented
by introducing wiring pitch reduction technology and on I/O pad placement technology to the conventional CS81
series.
The CS86 series has three types of cell sets (CS86MN, CS86MZ, and CS86ML), covering a variety of applications,
from portable devices requiring low power consumption to image processors requiring large-scale circuitry and
high speed.The three types of cell sets can be contained on one chip, allowing those system LSIs to be imple-
mented which require low power consumption as well as high-speed operation for certain types of processing.
s
FEATURES
鈥?Technology
: 0.18
碌m
silicon-gate CMOS, 4- to 6-layer wiring
The same chip can therefore incorporate the standard transistor cell and the ultrahigh-
speed or low-leakage process cell together.
Supply voltage
:
+1.8
V
卤
0.15 V (normal) to
+1.1
V
卤
0.1 V
Junction temperature range :
鈭?0 掳C
to
+125 掳C
Cell set
CS86MN : Offers standard transistor characteristics. Designed as a library for products requiring higher
throughputs.
CS86MZ : Offers transistor characteristics for ultra high-speed operation. Designed as a library for
products that require higher processing speeds than those provided by CS86MN.
CS86ML :
Offers transistor charactersistics with less leak current. Designed as a library for mobile
devices and other products requiring lower power consumption.
Cell Specifications :
Cell set name
CS86MZ
CS86MN
CS86ML
Delay time*
1
Power consumption*
2
Leak power*
3
70 ps
42.7 nW/MHz
3.922 nW
88 ps
40.1 nW/MHz
0.023 nW
136 ps
38.3 nW/MHz
0.0067 nW
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
*1 : 2 input NAND cell (low-power type) , F/O
=
2, normal load, Power supply voltage 1.8 V, Temperature
= +25 掳C
*2 : 2 input NAND cell (low-power type) , F/O
=
1, 4 Grid, Power supply voltage 1.8 V, Temperature
= +25 掳C
*3 : 2 input NAND cell (low-power type) , F/O
=
0, non load, Power supply voltage 1.8 V, Temperature
= +25 掳C
(Continued)

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