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CY9C6264-70SC Datasheet

  • CY9C6264-70SC

  • 8K x 8 Magnetic Nonvolatile CMOS RAM

  • 108.00KB

  • 0页

  • CYPRESS

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PRELIMINARY
CY9C6264
8K x 8 Magnetic Nonvolatile CMOS RAM
Features
鈥?100% form, fit, function compatible with 8K 脳 8
micropower SRAM CY6264
鈥?Fast Read and Write access: 70 ns
鈥?Voltage range: 4.5V鈥?.5V operation
鈥?Low active power: 330 mW (max.)
鈥?/div>
Low standby power, CMOS: 495
碌W
(max.)
鈥?Easy memory expansion with CE and OE features
鈥?TTL-compatible inputs and outputs
鈥?Automatic power-down when deselected
鈥?Replaces 8K 脳 8 Battery Backed (BB) SRAM, SRAM,
EEPROM, FeRAM, or Flash memory
鈥?Data is automatically Write protected during power loss
鈥?Write cycle endurance: >10
15
cycles
鈥?Data Retention: >10 Years
鈥?Shielded from external magnetic fields
鈥?Extra 64-bytes for device identification and tracking
鈥?Temperature ranges
鈥?/div>
Commercial: 0掳C to 70掳C
鈥?/div>
Industrial: 鈥?0掳C to +85掳C
鈥?/div>
JEDEC STD 28-pin DIP (600-mil), 28-pin (300-mil) SOIC
and 28-pin TSOP-1 packages. Also available in 450-mil
wide (300-mil body width) 28-pin narrow SOIC.
Functional Description
The CY9C6264 is a high-performance CMOS nonvolatile
RAM employing an advanced magnetic RAM (MRAM)
process. An MRAM is nonvolatile memory that operates as a
fast read and write RAM. It provides data retention for more
than ten years while eliminating the reliability concerns,
functional disadvantages, and system design complexities of
battery-backed SRAM, EEPROM, Flash and FeRAM. Its fast
writes and high write cycle endurance makes it superior to
other types of nonvolatile memory.
The CY9C6264 operates very similarly to SRAM devices.
Memory read and write cycles require equal times. The MRAM
memory is nonvolatile due to its unique magnetic process.
Unlike BBSRAM, the CY9C6264 is truly a monolithic nonvol-
atile memory. It provides the same functional benefits of a fast
write without the serious disadvantages associated with
modules and batteries or hybrid memory solutions.
These capabilities make the CY9C6264 ideal for nonvolatile
memory applications requiring frequent or rapid writes in a
byte wide environment.
The CY9C6264 is offered in both commercial and industrial
temperature ranges.
Logic Block Diagram
Pin Configurations
SOIC/DIP
Top View
NC
A
4
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
I/O
0
I/O
1
I/O
2
GND
OE
A
1
A
2
A
3
CE
2
WE
V
CC
NC
A
4
A
5
A
6
A
7
A
8
A
9
22
23
24
25
26
27
28
1
2
3
4
5
6
7
INPUTBUFFER
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
CE
2
CE
1
WE
OE
I/O
0
I/O
1
ROW DECODER
SENSE AMPS
Silicon Sig.
512 脳 128
Y
ARRA
I/O
2
I/O
3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
WE
CE
2
A
3
A
2
A
1
OE
A
0
CE
1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
21
20
19
18
17
16
15
14
13
12
11
10
9
8
I/O
4
I/O
5
COLUMN
DECODER
A
12
A
11
A
10
A
0
POWER
DOWN &
WRITE
PROTECT
I/O
6
I/O
7
TSOP I
Top View
(not to scale)
A
0
CE
1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
GND
I/O
2
I/O
1
I/O
0
A
12
A
11
A
10
Cypress Semiconductor Corporation
Document #: 38-15003 Rev. *D
鈥?/div>
3901 North First Street
鈥?/div>
San Jose
,
CA 95134
鈥?/div>
408-943-2600
Revised January 25, 2005

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