TetraFET
D2003UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B
H
C
2 3
1
A
D
G
E
5 4
F
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W 鈥?28V 鈥?1GHz
PUSH鈥揚ULL
FEATURES
鈥?SIMPLIFIED AMPLIFIER DESIGN
J
K
I
N
M
O
鈥?SUITABLE FOR BROAD BAND APPLICATIONS
鈥?VERY LOW C
rss
鈥?SIMPLE BIAS CIRCUITS
鈥?LOW NOISE
DQ
PIN 1
PIN 3
PIN 5
SOURCE (COMMON) PIN 2
DRAIN 2
PIN 4
GATE 1
DRAIN 1
GATE 2
DIM
mm
A
16.38
B
1.52
C
45掳
D
6.35
E
3.30
F
14.22
G 1.27 x 45掳
H
1.52
I
6.35
J
0.13
K
2.16
M
1.52
N
5.08
O
18.90
Tol.
0.26
0.13
5掳
0.13
0.13
0.13
0.13
0.13
0.13
0.02
0.13
0.13
MAX
0.13
Inches
0.645
0.060
45掳
0.250
0.130
0.560
0.05 x 45掳
0.060
0.250
0.005
0.085
0.060
0.200
0.744
Tol.
0.010
0.005
5掳
0.005
0.005
0.005
0.005
0.005
0.005
0.001
0.005
0.005
MAX
0.005
鈥?HIGH GAIN 鈥?13 dB MINIMUM
APPLICATIONS
鈥?/div>
VHF/UHF COMMUNICATIONS
from 50 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25掳C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
* Per Side
Semelab plc.
Power Dissipation
Drain 鈥?Source Breakdown Voltage *
Gate 鈥?Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
35W
65V
卤20V
1A
鈥?5 to 150掳C
200掳C
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Prelim.01/01
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