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NOTE: All polarities are shown for NPN transistors. For PNP transistors, reverse polarities.
(1) Pulse Width
漏
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
鈥?/div>
Fast Switching 鈥?tf = 90 ns (Max)
鈥?/div>
Key Parameters Specified @ 100
_
C
鈥?/div>
Low Collector鈥揈mitter Saturation Voltage 鈥?/div>
VCE(sat) = 1.0 V (Max) @ 8.0 A
鈥?/div>
Complementary Pairs Simplify Circuit Designs
Complementary Silicon Power
Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
These complementary silicon power transistors are designed for high鈥搒peed
switching applications, such as switching regulators and high frequency inverters.
The devices are also well鈥搒uited for drivers for high power switching circuits.
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Maximum Lead Temperature for Soldering
Purposes: 1/8鈥?from Case for 5 Seconds
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Junction Temperature Range
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
Collector Current 鈥?Continuous
鈥?Peak (1)
Emitter Base Voltage
Collector鈥揈mitter Voltage
Collector鈥揈mitter Voltage
v
6.0 ms, Duty Cycle
v
50%.
Characteristic
Rating
Symbol
Symbol
TJ, Tstg
VCEO
VCEV
R
胃JC
R
胃JA
VEB
IC
ICM
PD
TL
鈥?55 to 150
Value
62.5
Max
83
0.67
275
100
1.5
7.0
15 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80 VOLTS
83 WATTS
15
20
80
D44VH
PNP
D45VH
CASE 221A鈥?6
TO鈥?20AB
Order this document
by D44VH/D
NPN
Watts
W/
_
C
_
C/W
_
C/W
Unit
Unit
Adc
Vdc
Vdc
Vdc
_
C
_
C
1
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