UTC D882SS
NPN EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER LOW VOLTAGE
TRANSISTOR
FEATURES
*High current output up to 3A
*Low saturation voltage
*Complement to B772SS
2
1
APPLICATIONS
* Audio power amplifier
* DC-DC convertor
* Voltage regulator
3
MARKING
SOT-23
D82
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS
( Ta=25掳C ,unless otherwise specified )
PARAMETERS
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector dissipation( Tc=25掳C)
Collector dissipation( Ta=25掳C)
Collector current(DC)
Collector current(PULSE)
Base current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Pc
Ic
Ic
I
B
T
j
T
STG
RATING
40
30
5
10
1
3
7
0.6
150
-55 ~ +150
UNIT
V
V
V
W
W
A
A
A
掳C
掳C
ELECTRICAL CHARACTERISTICS
(Ta=25掳C,unless otherwise specified)
PARAMETER
Collector cut-off current
Emitter cut-off current
DC current gain(note 1)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Current gain bandwidth product
Output capacitance
SYMBOL
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
Cob
TEST CONDITIONS
V
CB
=30V,I
E
=0
V
EB
=3V,Ic=0
V
CE
=2V,Ic=20mA
V
CE
=2V,Ic=1A
Ic=2A,I
B
=0.2A
Ic=2A,I
B
=0.2A
V
CE
=5V,Ic=0.1A
V
CB
=10V,I
E
=0,f=1MHz
MIN
TYP
MAX
1000
1000
UNIT
nA
nA
30
100
200
150
0.3
1.0
80
45
400
0.5
2.0
V
V
MHz
pF
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R206-018,A
1
2
3
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