DS1270W
3.3V 16Mb Nonvolatile SRAM
www.maxim-ic.com
FEATURES
搂
搂
搂
搂
搂
搂
搂
Five years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Unlimited write cycles
Low-power CMOS operation
Read and write access times as fast as 100ns
Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time
Optional industrial (IND) temperature range
of -40掳C to +85掳C
PIN ASSIGNMENT
NC
A20
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
V
CC
A19
NC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
36-Pin Encapsulated Package
740mil Extended
PIN DESCRIPTION
A0鈥揂20
DQ0鈥揇Q7
CE
WE
OE
V
CC
GND
NC
- Address Inputs
- Data In/Data Out
- Chip Enable
- Write Enable
- Output Enable
- Power (+3.3V)
- Ground
- No Connect
DESCRIPTION
The DS1270W 16Mb nonvolatile (NV) SRAMs are 16,777,216-bit, fully static, NV SRAMs organized as
2,097,152 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control
circuitry that constantly monitors V
CC
for an out-of-tolerance condition. When such a condition occurs,
the lithium energy source is automatically switched on and write protection is unconditionally enabled to
prevent data corruption. There is no limit on the number of write cycles that can be executed, and no
additional support circuitry is required for microprocessor interfacing.
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