DWN35 Datasheet

IC型号：
DWN35
PDF描述：
Rectifier Diodes & FRED
文件大小：
765.79KB
PDF页数：
22页
芯片厂家：
IXYS

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Contents

Symbols and Definitions

Nomenclature

General Information

Assembly Instructions

FRED, Rectifier Diode and Thyristor Chips in Planar Design

Page

IGBT Chips

CES

G-Series, Low V

CE(sat)

B2 Types

G-Series, Fast C2 Types

S-Series, SCSOA Capability, Fast Types

E-Series, Improved NPT鲁 technology

600 ...1200 V

600 V

1200 ... 1700 V

7 ... 20 A

10 ... 20 A

20 ... 150 A

MOSFET Chips

DSS

HiPerFET

Power MOSFET

PolarHT

MOSFET, very Low R

DS(on)

P-Channel Power MOSFET

N-Channel Depletion Mode MOSFET

Layouts

70 ...1200 V

55 ... 300 V

-100 ...-600 V

500 ...1000 V

DS(on)

0.005 ... 4.5

鈩?/div>

0.015 ... 0.135

鈩?/div>

0.06 ... 1.2

鈩?/div>

30 ... 110

鈩?/div>

8-10

13-17

Bipolar Chips

RRM

/ V

DRM

Rectifier Diodes

FREDs

Low Leakage FREDs

SONIC-FRD

Diodes

GaAs Schottky Diodes

Schottky Diodes

Phase Control Thyristors

Fast Rectifier Diodes

1200 ... 1800 V

600 ... 1200 V

200 ... 1200 V

600 ... 1800 V

100 ... 600 V

8 ... 200 V

800 ... 2200 V

1600 ... 1800 V

F(AV)M

/ I

T(AV)M

12 ... 416 A

8 ... 244 A

9 ... 148 A

12 ... 150 A

3.5 ... 25 A

28 ... 145 A

15 ... 540 A

10 ... 26 A

18-19

20-21

22-23

24-25

26-27

28-31

32-33

Direct Copper Bonded (DCB), Direct Alu Bonded (DAB) Ceramic Substrates

What is DCB/DAB?

DCB Specification

IXYS reserves the right to change limits, test conditions and dimensions

型号

版本

描述

厂商

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Rectifier Diodes & FRED

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