polyfet rf devices
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
gold metal for greatly extended
lifetime. Low output capacitance
and high F
t
enhance broadband
performance
TM
F2002S
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
5 Watts Single Ended
Package Style CD
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Device
Dissipation
30 Watts
Junction to
Case Thermal
Resistance
8
o
C/W
Maximum
Junction
Temperature
200
o
C
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
70 V
Drain to
Source
Voltage
70 V
Gate to
Source
Voltage
30V
o
-65
o
C to 150
o
C
1.6 A
RF CHARACTERISTICS (
SYMBOL
Gps
PARAMETER
Common Source Power Gai
Drain Efficiency
Load Mismatch Toleranc
MIN
10
45
TYP
5WATTS OUTPUT )
MAX
UNITS
dB
%
20:1
Relative
TEST CONDITIONS
Idq = 0.4 A, Vds = 28.0 V, F = 1000 MHz
Idq = 0.4 A, Vds = 28.0 V, F = 1000 MHz
Idq = 0.4 A, Vds = 28.0 V, F = 1000 MHz
畏
VSWR
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
PARAMETER
Drain Breakdown Voltag
Zero Bias Drain Curren
Gate Leakage Curren
Gate Bias for Drain Curren
Forward Transconductanc
Saturation Resistanc
Saturation Curren
Common Source Input Capacitanc
Common Source Feedback Capacitanc
Common Source Output Capacitanc
1
0.4
2.1
2.4
18
2
12
MIN
65
0.4
1
7
TYP
MAX
UNITS
V
mA
uA
V
Mho
Ohm
Amp
pF
pF
pF
TEST CONDITIONS
Ids = 0.02 A,
Vds = 28.0 V,
Vds = 0 V,
Ids = 0.04 A,
Vgs = 0V
Vgs = 0V
Vgs = 30V
Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 2 A
Vgs = 20V, Vds = 10V
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
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