FSBCW30
Discrete POWER & Signal
Technologies
FSBCW30
C
E
B
SuperSOT
TM
-3
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 300 mA.
Sourced from Process 68. See BC857A for characteristics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25掳C unless otherwise noted
Parameter
Collector-Emitter Voltage
Value
32
32
5.0
500
-55 to +150
Units
V
V
V
mA
掳C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
胃JA
TA = 25掳C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25掳C
Thermal Resistance, Junction to Ambient
2
Max
FSBCW30
500
4
250
Units
mW
mW/掳C
掳C/W
*
Device mounted on FR-4 PCB 4.5" x 5"; mounting pad 0.02 in
of 2oz copper.
漏
1998 Fairchild Semiconductor Corporation
FSBCW30, Rev B
1
2
3
4
5
