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Medium Power Output: P1dB=21.5dB (Typ.)@8.0GHz
High Power Gain: G1dB=11dB (Typ.)@8.0GHz
Hermetic Metal/Ceramic Package
Proven Reliability
DESCRIPTION
The FSX017WF is a general purpose GaAs FET designed for medium
power applications up to the 12GHz. These devices have a wide
dynamic range and are suitable for use in medium power, wide band,
linear drive amplifiers or oscillators.
Fujitsu鈥檚 stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25掳C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
Ptot
Tstg
Tch
Condition
Rating
12
-5
1.0
-65 to +175
175
Unit
V
V
W
掳C
掳C
Tc = 25掳C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain - source operating voltage (VDS) should not exceed 8 volts.
2. The forward and reverse gate currents should not exceed 0.7 and -0.1 mA respectively with
gate resistance of 2000鈩?
3. The operating channel temperature (Tch) should not exceed 145掳C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25掳C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Noise Figure
Associated Gain
Symbol
IDSS
gm
Vp
VGSO
NF
Gas
P1dB
VDS = 3V, IDS = 10mA
f = 8GHz
Test Conditions
VDS = 3V, VGS = 0V
VDS = 3V, IDS = 27mA
VDS = 3V, IDS = 2.7mA
IGS = -2.7碌A
Min.
35
-
-0.7
-5.0
-
-
Limit
Typ. Max.
55
50
-1.2
-
2.5
10.5
21.5
21.5
20.5
15.0
11.0
7.5
120
75
-
-1.7
-
-
-
-
-
-
-
-
-
150
Unit
mA
mS
V
V
dB
dB
dBm
dBm
dBm
dB
dB
dB
掳C/W
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Thermal Resistance
CASE STYLE: WF
G1dB
Rth
f = 4GHz
-
VDS = 8V,
f = 8GHz 20.5
IDS = 0.7IDSS
f = 12GHz
-
f = 4GHz
-
VDS = 8V,
f = 8GHz 10.0
IDS = 0.7IDSS
-
f = 12GHz
Channel to Case
-
G.C.P.: Gain Compression Point
Edition 1.2
July 1999
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