FSYC360D, FSYC360R
Data Sheet
February 2000
File Number
4791
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs
speci铿乧ally designed for commercial and military space
applications. Enhanced Power MOSFET immunity to Single
Event Effects (SEE), Single Event Gate Rupture (SEGR) in
particular, is combined with 100K RADS of total dose
hardness to provide devices which are ideally suited to harsh
space environments. The dose rate and neutron tolerance
necessary for military applications have not been sacri铿乧ed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
铿乪ld-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil Corporation for any desired
deviations from the data sheet.
Features
鈥?21A, 400V, r
DS(ON)
= 0.210鈩?/div>
鈥?Total Dose
- Meets Pre-RAD Speci铿乧ations to 100K RAD (Si)
鈥?Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 10V Off-Bias
鈥?Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
鈥?Photo Current
- 35nA Per-RAD(Si)/s Typically
鈥?Neutron
- Maintain Pre-RAD Speci铿乧ations
for 3E12 Neutrons/cm
2
- Usable to 3E13 Neutrons/cm
2
Symbol
D
G
S
Packaging
Ordering Information
RAD LEVEL
10K
100K
100K
SCREENING LEVEL
Commercial
TXV
Space
PART NUMBER/BRAND
FSYC360D1
FSYC360R3
FSYC360R4
SMD2
Formerly available as type TA45206.
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
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Copyright
漏
Intersil Corporation 2000
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