Ordering number : EN5319A
N-Channel Silicon MOSFET
FW203
Ultrahigh-Speed Switching Applications
Features
鈥?Low ON resistance
Package Dimensions
unit: mm
鈥?Ultrahigh-speed switching.
2129-SOP8
鈥?Composite type with two 4V-drive N-channel MOSFETs
facilitating high-density mounting.
鈥?Matched pair capability.
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
[FW203]
Specifications
Absolute Maximum Ratings
at Ta=25掳C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
Ratings
PW鈮?0碌s, duty cycle鈮?%
Mounted on a ceramic board
(1000mm
2
脳0.8mm)
1unit
Mounted on a ceramic board
(1000mm
2
脳0.8mm)
30
卤20
5
48
1.7
2.0
150
鈥?5 to +150
Unit
V
V
A
A
W
W
掳C
掳C
Electrical Characteristics
at Ta=25掳C
Parameter
D-S Breakdown Voltage
Zero-Gate-Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source
ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
铮磞
fs
铮?/div>
RDS(on)
RDS(on)
Ciss
Coss
Crss
Conditions
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=卤16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=5A
ID=5A, VGS=10V
ID=5A, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
Ratings
min
30
typ
max
100
卤10
2.5
8
36
58
550
330
120
46
78
Unit
V
碌A
碌A
V
S
m鈩?/div>
m鈩?/div>
pF
pF
pF
1.0
5
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
O1397TS (KOTO) TA-0100 No.5319-1/3
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