Ordering number:EN4895
FX855
MOSFET:N-Channel Silicon MOSFET
SBD:Schottky Barrier Diode
DC-DC Converter Applications
Features
路 Composite type composed of a ow ON-resistance N-
channel MOSFET for ultrahigh-speed switching and
low-voltage driving and a fast-recovery, low forward
-voltage Schottky barrier diode. Facilitates high-
density mounting.
路 The FX855 is formed with 2 chips, one being
equivalent to the 2SK1470 and the other the SB05-
09, placed in one package.
Package Dimensions
unit:mm
2119
[FX855]
Electrical Connection
1:Gate
2:Source
3:No connection
4:Anode
5:Cathode
6:Drain
(Top view)
1:Gate
2:Source
3:No connection
4:Anode
5:Cathode
6:Drain
SANYO:XP6
(Bottom view)
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Rectified Current
Surge Forward Current
Junction Temperature
Storage Temperature
VRRM
VRSM
IO
IFSM
Tj
Tstg
50Hz sine wave, 1cycle
90
95
500
10
鈥?5 to +125
鈥?5 to +125
V
V
mA
A
藲C
藲C
VDSS
VGSS
ID
IDP
PD
PD
Tch
Tstg
PW
鈮?/div>
10碌s, duty cycle
鈮?/div>
1%
Tc=25藲C
Mounted on ceramic board (750mm
2
脳0.8mm)
60
卤15
2
8
6
1.5
150
鈥?5 to +150
V
V
A
A
W
W
藲C
藲C
Symbol
Conditions
Ratings
Unit
路 Marking:855
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/71095TS (KOTO) TA-0115 No.4895-1/4
1
2
3
4
