SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 2 - OCTOBER 1995
FEATURES
*
*
*
*
Extremely low equivalent on-resistance;
R
CE(sat)
44m鈩?at 5A
6 Amps continuous current, up to 20 Amps peak current
Very low saturation voltages
Excellent h
FE
characteristics specified up to 10 Amps
FZT851
FZT853
C
E
C
B
PARTMARKING DETAILS -
COMPLEMENTARY TYPES -
DEVICE TYPE IN FULL
FZT851
FZT951
FZT853
FZT953
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25掳C
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
FZT851
150
60
6
20
6
3
-55 to +150
FZT853
200
100
6
10
UNIT
V
V
V
A
A
W
掳C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
3 - 260
1
2
3
