GA150TD12U Datasheet_PDF文件下载_芯片资料查询

PD -5.067

PRELIMINARY

GA150TD120U

Ultra-Fast

TM

Speed IGBT

V

CES

=

1200

V

CE

(on) typ.

= 2.4V

@V

GE

=

15V

,

I

C

=

150A

"HALF-BRIDGE" IGBT DOUBLE INT-A-PAK

Features

鈥?Generation 4 IGBT technology

鈥?Standard: Optimized for minimum saturation

voltage and operating frequencies up to 10kHz

鈥?Very low conduction and switching losses

鈥?HEXFRED

鈩?/div>

antiparallel diodes with ultra- soft

recovery

鈥?Industry standard package

鈥?UL approved

Benefits

鈥?Increased operating efficiency

鈥?Direct mounting to heatsink

鈥?Performance optimized for power conversion: UPS,

SMPS, Welding

鈥?Lower EMI, requires less snubbing

Absolute Maximum Ratings

Parameter

V

CES

I

C

@ T

C

= 25掳C

I

CM

I

LM

I

FM

V

GE

V

ISOL

P

D

@ T

C

= 25掳C

P

D

@ T

C

= 85掳C

T

J

T

STG

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

聛

Peak Switching Current

聜

Peak Diode Forward Current

Gate-to-Emitter Voltage

RMS Isolation Voltage, Any Terminal To Case, t = 1 min

Maximum Power Dissipation

Operating Junction Temperature Range

Storage Temperature Range

Max.

1200

150

300

卤20

2500

780

406

-40 to +150

-40 to +125

Units

V

A

V

W

掳C

Thermal / Mechanical Characteristics

Parameter

R

胃JC

R

胃JC

R

胃CS

Thermal Resistance, Junction-to-Case - IGBT

Thermal Resistance, Junction-to-Case - Diode

Thermal Resistance, Case-to-Sink - Module

Mounting Torque, Case-to-Heatsink

Mounting Torque, Case-to-Terminal 1, 2 & 3

聝

Weight of Module

Typ.

鈥?/div>

0.1

鈥?/div>

400

Max.

0.16

0.20

鈥?/div>

4.0

3.0

鈥?/div>

Units

掳C/W

N

.

m

g

www.irf.com

1

12/29/97

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