HUFA76409D3ST Datasheet

  • HUFA76409D3ST

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  • Fairchild

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HUFA76409D3, HUFA76409D3S
Data Sheet
December 2001
17A, 60V, 0.071 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
Features
鈥?Ultra Low On-Resistance
- r
DS(ON)
= 0.063鈩?
V
GS
=
10V
- r
DS(ON)
= 0.071鈩?
V
GS
=
5V
鈥?Simulation Models
- Temperature Compensated PSPICE庐 and SABER鈩?/div>
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN
(FLANGE)
HUFA76409D3
HUFA76409D3S
Symbol
D
鈥?Switching Time vs R
GS
Curves
Ordering Information
G
PART NUMBER
S
PACKAGE
TO-251AA
TO-252AA
BRAND
76409D
76409D
HUFA76409D3
HUFA76409D3S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUFA76409D3ST.
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HUFA76409D3, HUFA76409D3SS
UNITS
V
V
V
A
A
A
A
60
60
卤16
17
18
8
8
Figure 4
Figures 6, 17, 18
49
0.327
-55 to 175
300
260
W
W/
o
C
o
C
o
C
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k鈩? (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 135
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 135
o
C, V
GS
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTE:
1. T
J
= 25
o
C to 150
o
C.
CAUTION:
Stresses above those listed in 鈥淎bsolute Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
漏2001 Fairchild Semiconductor Corporation
HUFA76409D3, HUFA76409D3S Rev. A

HUFA76409D3ST 产品属性

  • 2,500

  • 分离式半导体产品

  • FET - 单

  • UltraFET™

  • MOSFET N 通道,金属氧化物

  • 逻辑电平门

  • 60V

  • 18A

  • 63 毫欧 @ 18A,10V

  • 3V @ 250µA

  • 15nC @ 10V

  • 485pF @ 25V

  • 49W

  • 表面贴装

  • TO-252-3,DPak(2 引线+接片),SC-63

  • D-Pak

  • 带卷 (TR)

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