鈥?/div>
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
IKW03N120H2
IKP03N120H2
IKB03N120H2
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector current
T
C
= 25掳C,
f
= 140kHz
T
C
= 100掳C,
f
= 140kHz
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
鈮?/div>
1200V,
T
j
鈮?/div>
150掳C
Diode forward current
T
C
= 25掳C
T
C
= 100掳C
Gate-emitter voltage
Power dissipation
T
C
= 25掳C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
T
j
,
T
stg
-
-40...+150
260
225 (for SMD)
掳C
V
GE
P
tot
I
F
9.6
3.9
卤20
62.5
V
W
I
Cpuls
-
Symbol
V
CE
I
C
9.6
3.9
9.9
9.9
Value
1200
Unit
V
A
V
CE
1200V
1200V
1200V
I
C
3A
3A
3A
E
off
0.15mJ
0.15mJ
0.15mJ
T
j
150掳C
150掳C
150掳C
Package
P-TO-247
P-TO-220-3-1
P-TO-263 (D
2
PAK)
Ordering Code
Q67040-S4595
Q67040-S4594
Q67040-S4597
Power Semiconductors
1
Rev. 2, Mar-04
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