IRF646
Data Sheet
June 1999
File Number
2169.3
14A, 275V, 0.280 Ohm, N-Channel Power
MOSFET
This N-Channel enhancement mode silicon gate power 铿乪ld
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a speci铿乪d level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17423.
Features
鈥?14A, 275V
鈥?r
DS(ON)
= 0.280鈩?/div>
鈥?Single Pulse Avalanche Energy Rated
鈥?SOA is Power Dissipation Limited
鈥?Nanosecond Switching Speeds
鈥?Linear Transfer Characteristics
鈥?High Input Impedance
鈥?275VDC Rating-120VAC Line System Operation
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Ordering Information
PART NUMBER
IRF646
PACKAGE
TO-220AB
BRAND
IRF646
Symbol
D
NOTE: When ordering, use the entire part number.
G
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
4-214
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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Copyright
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Intersil Corporation 1999
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