HiPerFET
TM
Power MOSFETs
V
DSS
IXFH 26N60/IXFT 26N60
IXFK 28N60
I
D25
R
DS(on)
0.25
W
0.25
W
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Preliminary data
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.063 in) from case for 10 s
Mounting torque
300
1.13/10
6
Test Conditions
T
J
= 25掳C to 150掳C
T
J
= 25掳C to 150掳C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25掳C, Chip capability
T
C
= 25掳C, pulse width limited by T
JM
T
C
= 25掳C
T
C
= 25掳C
T
C
= 25掳C
I
S
拢
I
DM
, di/dt
拢
100 A/ms, V
DD
拢
V
DSS
,
T
J
拢
150掳C, R
G
= 2
W
T
C
= 25掳C
Maximum Ratings
IXFH/ IXFT
IXFK
600 V 26 A
600 V 28 A
t
rr
拢
250 ns
TO-247 AD (IXFH)
600
600
卤20
卤30
26
104
26
50
1.5
5
360
600
600
卤20
卤30
28
112
28
50
1.5
5
416
150
V
V
V
V
A
A
A
mJ
J
V/ns
TO-264 AA (IXFK)
G
S
(TAB)
TO-268 (D3) ( IXFT)
(TAB)
W
掳C
掳C
掳C
掳C
G = Gate
S = Source
TAB = Drain
G
D
S
-55 ... +150
-55 ... +150
300
D (TAB)
0.9/6 Nm/lb.in.
10
g
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
Symbol
Test Conditions
Characteristic Values
(T
J
= 25掳C, unless otherwise specified)
min. typ. max.
600
2
4.5
卤200
T
J
= 25掳C
T
J
= 125掳C
25
1
0.25
V
V
nA
mA
mA
W
鈥?International standard packages
鈥?Epoxy meet UL 94 V-0, flammability
classification
鈥?Low R
DS (on)
HDMOS
TM
process
鈥?Rugged polysilicon gate cell structure
鈥?Avalanche energy and current rated
鈥?Fast intrinsic Rectifier
Advantages
鈥?Easy to mount
鈥?Space savings
鈥?High power density
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
卤20
V
DC
, V
DS
= 0
V
DS
= 0.8 鈥?V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 鈥?I
D25
Pulse test, t
拢
300
ms,
duty cycle d
拢
2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
98511B (7/00)
漏 2000 IXYS All rights reserved
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