HiPerFET
TM
Power MOSFETs
V
DSS
I
D25
R
DS(on)
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
Preliminary data sheet
IXFH/IXFT/IXFX14N100 1000 V
14 A 0.75
W
IXFH/IXFT/IXFX15N100 1000 V
15 A 0.70
W
t
rr
拢
200 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25掳C to 150掳C
T
J
= 25掳C to 150掳C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25掳C
T
C
= 25掳C, pulse width limited by T
JM
T
C
= 25掳C
T
C
= 25掳C
I
S
拢
I
DM
, di/dt
拢
100 A/ms, V
DD
拢
V
DSS
,
T
J
拢
150掳C, R
G
= 2
W
T
C
= 25掳C
14N100
15N100
14N100
15N100
14N100
15N100
Maximum Ratings
1000
1000
卤20
卤30
14
15
56
60
14
15
45
5
360
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
A
A
mJ
V/ns
W
掳C
掳C
掳C
掳C
Nm/lb.in.
g
TO-247 AD
(IXFH)
(TAB)
PLUS 247
TM
(IXFX)
(TAB)
G
D
TO-268 (D3)
(IXFT)
G
S
(TAB)
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
1.13/10
6
Features
q
International standard packages
q
Low R
DS (on)
HDMOS
TM
process
q
Rugged polysilicon gate cell structure
q
Unclamped Inductive Switching (UIS)
rated
q
Low package inductance
- easy to drive and to protect
q
Fast intrinsic Rectifier
Applications
q
DC-DC converters
q
Battery chargers
q
Switched-mode and resonant-mode
power supplies
q
DC choppers
q
AC motor control
q
Temperature and lighting controls
Advantages
q
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole) or
mounting clip or spring (PLUS 247
TM
)
q
High power surface mountable package
q
High power density
97535B (1/99)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25掳C, unless otherwise specified)
min. typ. max.
1000
2.5
4.5
卤100
T
J
= 25掳C
T
J
= 125掳C
250
1
0.75
0.70
V
V
nA
mA
mA
W
W
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
卤20
V
DC
, V
DS
= 0
V
DS
= 0.8 鈥?V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 鈥?I
D25
14N100
15N100
Pulse test, t
拢
300
ms,
duty cycle d
拢
2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
漏 2000 IXYS All rights reserved
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