鈩?/div>
T
C
= 25掳C
Maximum Ratings
250
250
卤20
卤30
62
248
62
45
1.5
5
390
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
J
V/ns
W
掳C
掳C
掳C
掳C
PLUS 247
TM
(IXFX)
G
(TAB)
D
TO-264 AA (IXFK)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
PLUS 247
TO-264
300
0.7/6 Nm/lb.in.
6
10
g
g
Features
l
International standard packages
l
Low R
DS (on)
HDMOS
TM
process
l
Rugged polysilicon gate cell structure
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
l
Fast intrinsic rectifier
Symbol
Test Conditions
Characteristic Values
(T
J
= 25掳C, unless otherwise specified)
min. typ. max.
250
2.0
V
4.0 V
卤100
nA
T
J
= 25掳C
T
J
= 125掳C
50
碌A
2 mA
35 m鈩?/div>
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
卤20
V, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Note 1
Applications
l
DC-DC converters
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
AC motor control
l
Temperature and lighting controls
Advantages
PLUS 247
TM
package for clip or spring
mounting
l
Space savings
l
High power density
l
漏 2002 IXYS All rights reserved
98913 (2/02)
1
2
