鈩?/div>
T
C
= 25掳C
6
200
5
54
-55 ... +150
150
-55 ... +150
G
S
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Mounting torque
1.13/10
Features
Maximum lead temperature for soldering
聼
International standard packages
聼
Low R
DS (on)
HDMOS
TM
process
聼
Rugged polysilicon gate cell structure
聼
Low package inductance (< 5 nH)
- easy to drive and to protect
聼
Fast switching times
Symbol
Test Conditions
Characteristic Values
(T
J
= 25掳C, unless otherwise specified)
min. typ. max.
800
2.5
5.5
卤100
T
J
= 125掳C
25
500
6.2
V
V
nA
碌A
碌A
鈩?/div>
Applications
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
碌A
V
DS
= V
GS
, I
D
= 250
碌A
V
GS
=
卤20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
聼
Switch-mode and resonant-mode
power supplies
聼
Flyback inverters
聼
DC choppers
Advantages
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
鈮?/div>
300
碌s,
duty cycle d
鈮?/div>
2 %
聼
Space savings
聼
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
98541A 03/24/00
漏 2000 IXYS All rights reserved
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