= 1.0 M鈩?/div>
Continuous
Transient
T
C
= 25掳C MOSFET chip capability
External lead current limit
T
C
= 25掳C, pulse width limited by T
JM
T
C
= 25掳C
T
C
= 25掳C
T
C
= 25掳C
I
S
鈮?/div>
I
DM
, di/dt
鈮?/div>
100 A/碌s, V
DD
鈮?/div>
V
DSS
T
J
鈮?/div>
150掳C, R
G
= 2
鈩?/div>
T
C
= 25掳C
Maximum ratings
250
250
卤20
卤30
120
75
480
90
64
3.0
5
560
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
mJ
J
V/ns
W
掳
C
掳
C
掳
C
掳
C
Nm/lb.in.
g
G
D
S
TO-264 AA (IXTK)
D (TAB)
G = Gate
S = Source
D
= Drain
Tab = Drain
Features
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
300
0.7/6
10
鈥?/div>
Low R
DS (on)
HDMOS
TM
process
鈥?/div>
Rugged polysilicon gate cell structure
鈥?/div>
International standard package
鈥?/div>
Fast switching times
Applications
Symbol Test Conditions
(T
J
= 25掳C unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250
碌A
V
GS
= 卤20 V DC, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25掳C
T
J
= 125掳C
Characteristic Values
Min. Typ.
Max.
250
2.0
4.0
卤200
V
V
nA
鈥?/div>
鈥?/div>
鈥?/div>
Motor controls
DC choppers
Switched-mode power supplies
Advantages
鈥?/div>
鈥?/div>
鈥?/div>
50
碌A
3 mA
22 m鈩?/div>
Easy to mount with one screw
(isolated mounting screw hole)
Space savings
High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
鈮?/div>
300 ms, duty cycle d
鈮?/div>
2%
漏 2002 IXYS All rights reserved
98879A (02/02)
IXTK120N25 产品属性
30
分离式半导体产品
FET - 单
MegaMOS™
MOSFET N 通道，金属氧化物
标准型
250V
120A
20 毫欧 @ 500mA，10V
4V @ 250µA
360nC @ 10V
7700pF @ 25V
730W
通孔
TO-264-3，TO-264AA
TO-264AA
管件
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