= 1 M鈩?/div>
Continuous
Transient
T
C
= 25掳C;T
J
= 25掳C to 150掳C
T
C
= 25掳C, pulse width limited by T
J
T
C
= 25掳C
T
A
= 25掳C
Maximum Ratings
TO-220AB (IXTP)
1000
1000
卤20
卤30
100
400
25
1.1
-55 ... +150
150
-55 ... +150
V
V
V
V
mA
mA
W
W
掳C
掳C
掳C
掳
C
g
Features
l
l
l
l
GD
D (TAB)
S
Normally ON mode
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Fast switching speed
1.6 mm (0.063 in.) from case for 10 s
300
1
Applications
l
l
Level shifting
Triggers
Solid state relays
Current regulators
Symbol
Test Conditions
Characteristic Values
(T
J
= 25掳C, unless otherwise specified)
min. typ. max.
1000
-2.5
-5
卤100
T
J
= 25掳C
T
J
= 125掳C
90
250
10
250
110
V
V
nA
碌A
碌A
鈩?/div>
mA
l
l
V
DSS
V
GS(off)
I
GSS
I
DSS(off)
R
DS(on)
I
D(on)
V
GS
= -10 V, I
D
= 25
碌A
V
DS
= 25V, I
D
= 25
碌A
V
GS
=
卤20
V
DC
, V
DS
= 0
V
DS
= V
DSS
, V
GS
= -10 V
V
GS
=
0 V,
I
D
= 50 mA
Note 1
V
GS
= 0 V, V
DS
= 50V Note 1
漏 2001 IXYS All rights reserved
98809A (12/01)
1
2
